Title :
E-beam inspection for gap physical defect detection in 28nm CMOS process
Author :
Tsung Chih Chen ; Chen Nan Tsai ; Pai, White ; Wu, Chunlin ; Lin, Li-Chiun ; Fei Wang
Author_Institution :
Fab 12A Defect Manage. Dept., UMC, Tainan, Taiwan
Abstract :
As design rule continuously shrinks, process windows narrow. Defects that are trivial in the previous technology node become yield limiting factors. E-beam inspection (EBI) starts to play a critical role in sub-design rule physical defect detection due to its superior resolution, high signal to noise ratio, and novel voltage contrast and material contrast capability. In this paper, we will demonstrate the application of EBI on three critical layers in 28nm CMOS process, covering from FEOL to BEOL.
Keywords :
CMOS integrated circuits; electron beam applications; inspection; CMOS process; E-beam inspection; EBI; design rule; gap physical defect detection; size 28 nm; CMOS integrated circuits; CMOS process; Failure analysis; Image resolution; Inspection; Silicon compounds; Silicon germanium; CMOS; EBI; physical defect;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference (ASMC), 2013 24th Annual SEMI
Conference_Location :
Saratoga Springs, NY
Print_ISBN :
978-1-4673-5006-8
DOI :
10.1109/ASMC.2013.6552750
