DocumentCode :
614919
Title :
Defect reduction by nitrogen purge of wafer carriers
Author :
Van Roijen, R. ; Joshi, Pankaj ; Bailey, D. ; Conti, Stefania ; Brennan, W. ; Findeis, P.
Author_Institution :
Microelectron. Div., IBM, Hopewell Junction, NY, USA
fYear :
2013
fDate :
14-16 May 2013
Firstpage :
338
Lastpage :
341
Abstract :
Nitrogen purge of wafer carriers is driving defect density reduction at critical process steps. We discuss the mechanism of defect creation and how nitrogen purge improves defect density. We report on experimental split data from in line inspection and the impact at electrical test. The effect on volume manufacturing is demonstrated.
Keywords :
inspection; semiconductor device manufacture; critical process; defect density reduction; electrical test; inspection; nitrogen purge; volume manufacturing; wafer carriers; Contamination; Epitaxial growth; Logic gates; Manufacturing; Nitrogen; Silicon germanium; Surface cleaning; Contamination; Semiconductor processing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Manufacturing Conference (ASMC), 2013 24th Annual SEMI
Conference_Location :
Saratoga Springs, NY
ISSN :
1078-8743
Print_ISBN :
978-1-4673-5006-8
Type :
conf
DOI :
10.1109/ASMC.2013.6552756
Filename :
6552756
Link To Document :
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