• DocumentCode
    614920
  • Title

    Single wafer cleaning lessons in advanced node gate module development

  • Author

    Hilscher, D.F. ; Jaeger, David ; DeWan, Charlotte ; Brodsky, Maryjane ; Rettmann, Ryan

  • Author_Institution
    Semicond. R&D Center, IBM, Hopewell Junction, NY, USA
  • fYear
    2013
  • fDate
    14-16 May 2013
  • Firstpage
    342
  • Lastpage
    345
  • Abstract
    With single wafer cleaning becoming a mature part of advanced semiconductor manufacturing, it seemed appropriate to reflect on a period of rapid and dramatic change within the gate module. Specifically, there are 6 key learnings that have enabled our team to take embedded contamination from top of the yield pareto to a more baseline level of defectivity. Those key learnings were: 1) Particle removal efficiency is critical. 2) DI Prewet improves pattern fidelity. 3) S/P ratio drives dual gate chemical oxide growth. 4) Hydrophobic dewetting can occur. 5) Predispense sequences are critical. 6) Concentration differences between batch and single wafer tooling can drive significant effects.
  • Keywords
    contamination; hydrophobicity; semiconductor device manufacture; semiconductor technology; surface cleaning; DI Prewet; advanced node gate module development; advanced semiconductor manufacturing; dual gate chemical oxide growth; embedded contamination; hydrophobic dewetting; particle removal efficiency; pattern fidelity; single wafer cleaning lessons; Chemicals; Cleaning; Films; Hafnium; Liquids; Logic gates; SPM; Single wafer clean; chemical oxide; gate cleans; hydrophobic dewetting; particle removal efficiency; patterned wet etch; predispense;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Manufacturing Conference (ASMC), 2013 24th Annual SEMI
  • Conference_Location
    Saratoga Springs, NY
  • ISSN
    1078-8743
  • Print_ISBN
    978-1-4673-5006-8
  • Type

    conf

  • DOI
    10.1109/ASMC.2013.6552757
  • Filename
    6552757