Title :
Single wafer cleaning lessons in advanced node gate module development
Author :
Hilscher, D.F. ; Jaeger, David ; DeWan, Charlotte ; Brodsky, Maryjane ; Rettmann, Ryan
Author_Institution :
Semicond. R&D Center, IBM, Hopewell Junction, NY, USA
Abstract :
With single wafer cleaning becoming a mature part of advanced semiconductor manufacturing, it seemed appropriate to reflect on a period of rapid and dramatic change within the gate module. Specifically, there are 6 key learnings that have enabled our team to take embedded contamination from top of the yield pareto to a more baseline level of defectivity. Those key learnings were: 1) Particle removal efficiency is critical. 2) DI Prewet improves pattern fidelity. 3) S/P ratio drives dual gate chemical oxide growth. 4) Hydrophobic dewetting can occur. 5) Predispense sequences are critical. 6) Concentration differences between batch and single wafer tooling can drive significant effects.
Keywords :
contamination; hydrophobicity; semiconductor device manufacture; semiconductor technology; surface cleaning; DI Prewet; advanced node gate module development; advanced semiconductor manufacturing; dual gate chemical oxide growth; embedded contamination; hydrophobic dewetting; particle removal efficiency; pattern fidelity; single wafer cleaning lessons; Chemicals; Cleaning; Films; Hafnium; Liquids; Logic gates; SPM; Single wafer clean; chemical oxide; gate cleans; hydrophobic dewetting; particle removal efficiency; patterned wet etch; predispense;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference (ASMC), 2013 24th Annual SEMI
Conference_Location :
Saratoga Springs, NY
Print_ISBN :
978-1-4673-5006-8
DOI :
10.1109/ASMC.2013.6552757