DocumentCode :
614924
Title :
Automated transmission electron microscopy for defect review and metrology of Si devices
Author :
Strauss, Michael ; Williamson, Mark
Author_Institution :
FEI Co., Hillsboro, OR, USA
fYear :
2013
fDate :
14-16 May 2013
Firstpage :
366
Lastpage :
370
Abstract :
Functions to automate TEM sample alignment and focus have been developed and tested on a 200 kV S/TEM. Sensitivity and repeatability data for functions allowing for automated eucentric height, focus, and zone axis alignment are presented. Eucentric and focus autofunctions were used to collect dynamic precision metrology data from a commercially available 22nm microprocessor. Results show 3σ standard deviation dynamic precision values better than 0.5nm for all recorded measurements.
Keywords :
measurement; microprocessor chips; semiconductor industry; transmission electron microscopy; Si devices; automate TEM sample alignment; automated eucentric height; automated transmission electron microscopy; defect review; metrology; microprocessor; Logic gates; Metrology; Scanning electron microscopy; Semiconductor device measurement; Sensitivity; Standards; Automation; CD-TEM; Metrology; TEM;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Manufacturing Conference (ASMC), 2013 24th Annual SEMI
Conference_Location :
Saratoga Springs, NY
ISSN :
1078-8743
Print_ISBN :
978-1-4673-5006-8
Type :
conf
DOI :
10.1109/ASMC.2013.6552761
Filename :
6552761
Link To Document :
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