Cu/Ni interface study for bump reliability improvement

Author

Rung-De Wang ; Chen-Hsun Liu ; Yu-Nu Hsu ; Lo, Julia ; Chin-Yu Ku

Author_Institution

Backend Integration Dev. Dept., Taiwan Semicond. Manuf. Co., Ltd. (TSMC), Tainan, Taiwan

fYear

2013

fDate

14-16 May 2013

Firstpage

121

Lastpage

125

Abstract

Under Bump Metallization (UBM) quality is crucial to the reliability of flip chip products. This paper focuses on the failure mechanism that attributed to Temperature Humidity Bias (THB) test. The importance of metal film condition is emphasized, and the effect of voltage bias is discussed. In addition, a detailed experiment on Cu/Ni UBM interface is carried out for THB improvement. The investigation scope contains Cu surface topography and Cu/Ni interface adhesion. Based on the experiment results, the optimal process condition has been determined. A notable improvement of THB performance is achieved after process optimization.

Keywords

adhesion; copper; failure (mechanical); flip-chip devices; humidity; mechanical testing; metallisation; nickel; reliability; surface topography; thin films; Cu-Ni; THB; UBM; bump reliability improvement; failure mechanism; flip chip product; interface adhesion; metal film condition; optimization process; surface topography; temperature humidity bias testing; under bump metallization quality; voltage bias effect; Adhesives; Delamination; Nickel; Reliability; Rough surfaces; Surface roughness; Surface topography; THB; bump; flip chip; reliability;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Manufacturing Conference (ASMC), 2013 24th Annual SEMI

Conference_Location

Saratoga Springs, NY

ISSN

1078-8743

Print_ISBN

978-1-4673-5006-8

Type

conf

DOI

10.1109/ASMC.2013.6552798

Filename

6552798