DocumentCode :
614981
Title :
Pre-clean synergy with poly EMP process
Author :
Wooi-Cheang Goh ; Yan Chen ; Yan-Zheng Peck ; Won-Gyu Park ; Kah-Keen Lai
Author_Institution :
Process/Modular Integration, GLOBALFOUNDRIES, Singapore, Singapore
fYear :
2013
fDate :
14-16 May 2013
Firstpage :
280
Lastpage :
285
Abstract :
This paper describes the process integration between pre-clean and poly-silicon (poly) chemical mechanical polishing (CMP) processes that result in the most cost effective manufacturing capability. It is shown how the choice of pre-clean and dryer variables can influence the throughput of the poly CMP process. This indirectly takes away redundant process steps and reduces manufacturing cost. It was observed that different pre-clean process variables result in various surface potential charges and conditions that can influence the polish rate of the poly-silicon during the CMP process.
Keywords :
chemical mechanical polishing; cleaning; costing; semiconductor device manufacture; silicon; Si; dryer variables; manufacturing capability; manufacturing cost; poly CMP process; poly-silicon poly chemical mechanical polishing; pre-clean poly chemical mechanical polishing; pre-clean synergy; process integration; Abrasives; Chemicals; Manufacturing; Silicon; Slurries; Surface cleaning; Chemical mechanical polishing(CMP); Poly-silicon; Pre-clean; Spin-rinse-drying(SRD); Vapor Dryer (VD);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Manufacturing Conference (ASMC), 2013 24th Annual SEMI
Conference_Location :
Saratoga Springs, NY
ISSN :
1078-8743
Print_ISBN :
978-1-4673-5006-8
Type :
conf
DOI :
10.1109/ASMC.2013.6552820
Filename :
6552820
Link To Document :
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