• DocumentCode
    614981
  • Title

    Pre-clean synergy with poly EMP process

  • Author

    Wooi-Cheang Goh ; Yan Chen ; Yan-Zheng Peck ; Won-Gyu Park ; Kah-Keen Lai

  • Author_Institution
    Process/Modular Integration, GLOBALFOUNDRIES, Singapore, Singapore
  • fYear
    2013
  • fDate
    14-16 May 2013
  • Firstpage
    280
  • Lastpage
    285
  • Abstract
    This paper describes the process integration between pre-clean and poly-silicon (poly) chemical mechanical polishing (CMP) processes that result in the most cost effective manufacturing capability. It is shown how the choice of pre-clean and dryer variables can influence the throughput of the poly CMP process. This indirectly takes away redundant process steps and reduces manufacturing cost. It was observed that different pre-clean process variables result in various surface potential charges and conditions that can influence the polish rate of the poly-silicon during the CMP process.
  • Keywords
    chemical mechanical polishing; cleaning; costing; semiconductor device manufacture; silicon; Si; dryer variables; manufacturing capability; manufacturing cost; poly CMP process; poly-silicon poly chemical mechanical polishing; pre-clean poly chemical mechanical polishing; pre-clean synergy; process integration; Abrasives; Chemicals; Manufacturing; Silicon; Slurries; Surface cleaning; Chemical mechanical polishing(CMP); Poly-silicon; Pre-clean; Spin-rinse-drying(SRD); Vapor Dryer (VD);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Manufacturing Conference (ASMC), 2013 24th Annual SEMI
  • Conference_Location
    Saratoga Springs, NY
  • ISSN
    1078-8743
  • Print_ISBN
    978-1-4673-5006-8
  • Type

    conf

  • DOI
    10.1109/ASMC.2013.6552820
  • Filename
    6552820