• DocumentCode
    615023
  • Title

    Integrated photodiode characterization in a SiGe BiCMOS process

  • Author

    Sharif-Bakhtiar, Alireza ; Shahramian, Shayan ; Rousson, Alain ; Yasotharan, Hemesh ; Carusone, Tony Chan

  • Author_Institution
    Univ. of Toronto, Toronto, ON, Canada
  • fYear
    2013
  • fDate
    5-8 May 2013
  • Firstpage
    68
  • Lastpage
    69
  • Abstract
    In this paper three photodetector structures were simulated, fabricated and characterized at 850nm in a SiGe BiCMOS process. The measurement and simulation results suggest that the additional vertical layers offered by SiGe process compared to CMOS can facilitate higher detector bandwidth at the expense of reduced low frequency responsivity.
  • Keywords
    BiCMOS integrated circuits; Ge-Si alloys; frequency response; integrated optics; photodetectors; photodiodes; BiCMOS process; SiGe; frequency responsivity; integrated photodiode; photodetectors; Bandwidth; BiCMOS integrated circuits; Detectors; Optical receivers; Photodiodes; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Interconnects Conference, 2013 IEEE
  • Conference_Location
    Santa Fe, NM
  • Print_ISBN
    978-1-4673-5061-7
  • Electronic_ISBN
    978-1-4673-5062-4
  • Type

    conf

  • DOI
    10.1109/OIC.2013.6552927
  • Filename
    6552927
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=615023