Title :
Approaches for a viable Germanium laser: Tensile strain, GeSn alloys, and n-type doping
Author :
Sukhdeo, David S. ; Hai Lin ; Donguk Nam ; Ze Yuan ; Vulovic, Boris M. ; Gupta, Swastik ; Harris, James S. ; Dutt, Birendra ; Saraswat, Krishna C.
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
Abstract :
We model the impact of tensile strain, GeSn alloys and n-type doping on the performance of germanium-based lasers. Ultimately, doping offers limited benefits, whereas GeSn and strain can reduce the lasing threshold by >100x.
Keywords :
elemental semiconductors; germanium; germanium alloys; semiconductor device models; semiconductor doping; semiconductor lasers; tin alloys; Ge-GeSn; GeSn alloys; germanium-based lasers; lasing threshold; n-type doping; tensile strain; Doping; Laser modes; Laser theory; Tensile strain; Tin; GeSn; doping; germanium; laser materials; strain;
Conference_Titel :
Optical Interconnects Conference, 2013 IEEE
Conference_Location :
Santa Fe, NM
Print_ISBN :
978-1-4673-5061-7
Electronic_ISBN :
978-1-4673-5062-4
DOI :
10.1109/OIC.2013.6552949
