Extraction of the Interface State Density of Top-Gate Graphene Field-Effect Transistors

Author

Yin Xu ; Yun Ji Kim ; Yonghun Kim ; Young Gon Lee ; Byoung Hun Lee

Author_Institution

Center for Emerging Electr. Devices & Syst., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea

Volume

36

Issue

4

fYear

2015

fDate

Apr-15

Firstpage

408

Lastpage

410

Abstract

Novel electrical measurement method, discharge current analysis (DCA), is introduced to extract the density and energy distribution of charge traps at the dielectric interface of top-gate graphene field-effect transistors. Using DCA method, the highest charge trap density ~10¹³ (cm^-2 · eV^-1) is extracted at Fermi level ~0.4 eV. This is the first quantitative estimation of trap density at a specific Fermi level of graphene.

Keywords

Fermi level; field effect transistors; graphene devices; interface states; DCA method; Fermi level; charge trap density; charge trap energy distribution; dielectric interface; discharge current analysis; electrical measurement method; interface state density; quantitative estimation; top-gate graphene field-effect transistor; Charge carrier processes; Current measurement; Discharges (electric); Field effect transistors; Graphene; Logic gates; Quantum capacitance; Discharge current analysis (DCA); Top gate graphene FET; discharge current analysis (DCA); graphene instability; interfacial trap density; interfacial trap density,; top gate graphene FET;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2015.2402287

Filename

7038213