Title :
Extraction of the Interface State Density of Top-Gate Graphene Field-Effect Transistors
Author :
Yin Xu ; Yun Ji Kim ; Yonghun Kim ; Young Gon Lee ; Byoung Hun Lee
Author_Institution :
Center for Emerging Electr. Devices & Syst., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea
Abstract :
Novel electrical measurement method, discharge current analysis (DCA), is introduced to extract the density and energy distribution of charge traps at the dielectric interface of top-gate graphene field-effect transistors. Using DCA method, the highest charge trap density ~1013 (cm-2 · eV-1) is extracted at Fermi level ~0.4 eV. This is the first quantitative estimation of trap density at a specific Fermi level of graphene.
Keywords :
Fermi level; field effect transistors; graphene devices; interface states; DCA method; Fermi level; charge trap density; charge trap energy distribution; dielectric interface; discharge current analysis; electrical measurement method; interface state density; quantitative estimation; top-gate graphene field-effect transistor; Charge carrier processes; Current measurement; Discharges (electric); Field effect transistors; Graphene; Logic gates; Quantum capacitance; Discharge current analysis (DCA); Top gate graphene FET; discharge current analysis (DCA); graphene instability; interfacial trap density; interfacial trap density,; top gate graphene FET;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2015.2402287
