Title :
Testing a Commercial MRAM Under Neutron and Alpha Radiation in Dynamic Mode
Author :
Tsiligiannis, G. ; Dilillo, L. ; Bosio, A. ; Girard, P. ; Todri, A. ; Virazel, A. ; McClure, S.S. ; Touboul, A.D. ; Wrobel, F. ; Saigne, F.
Author_Institution :
Lab. d´Inf., de Robot. et de Microelectron. de Montpellier (LIRMM), Univ. de Montpellier 2, Montpellier, France
Abstract :
Academic and industrial research interest in terrestrial radiation effects of electronic devices has expanded over the last years from avionics and military applications to commercial applications as well. At the same time, the need for faster and more reliable memories has given growth to new memory technologies such as Magnetic (magneto-resistive) Random Access Memories (MRAM), a promising new non-volatile memory technology that will probably replace in the future the current SRAM and FLASH based memories. In this paper, we evaluate the soft error resilience of a commercial toggle MRAM in static and dynamic test mode, under neutron radiation with energies of 25, 50 and 80 MeV as well as under a Californium (Cf-252) alpha source.
Keywords :
MRAM devices; SRAM chips; flash memories; Californium alpha source; Cf-252 alpha source; SRAM based memories; alpha radiation; avionics application; commercial MRAM testing; dynamic mode; dynamic test mode; electron volt energy 25 MeV; electron volt energy 50 MeV; electron volt energy 80 MeV; flash based memories; magnetic random access memories; magneto-resistive random access memories; memory technologies; military application; neutron radiation; non-volatile memory technology; soft error resilience; Alpha particles; Computer architecture; Field programmable gate arrays; Magnetic tunneling; Neutrons; Particle beams; Radiation effects; Alpha particles; Toggle MRAM; neutron; radiation; soft errors;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2013.2239311
