Total Dose Irradiation-Induced Degradation of Hysteresis Effect in Partially Depleted Silicon-on-Insulator NMOSFETs

Author

Huixiang Huang ; Dawei Bi ; Bingxu Ning ; Yanwei Zhang ; Zhengxuan Zhang ; Shichang Zou

Author_Institution

State Key Lab. of Functional Mater. for Inf., Shanghai Inst. of Microsyst. & Inf. Technol., Shanghai, China

Volume

60

Issue

2

fYear

2013

fDate

Apr-13

Firstpage

1354

Lastpage

1360

Abstract

In this work, we present a study of hysteresis effect degradation induced by total dose irradiation in partially depleted SOI nMOSFETs with floating bodies. In addition to traditional linear kink effect, evidence is provided for a new hysteresis effect which occurs in output characteristics during the forward and reverse sweeps. For the first time, it is shown that at a sufficiently high irradiation level, the hysteresis behaviors both in transfer and output characteristics vanish due to interface traps and oxide trapped charge. 3D process and device simulations are performed to investigate the combined effects of charge trapping in oxide and interface traps.

Keywords

MOSFET; hysteresis; nuclear electronics; radiation effects; semiconductor device models; silicon-on-insulator; 3D process; Si; charge trapping effects; fĺoating bodies; high irradiation level; hysteresis behaviors; hysteresis effect; linear kink effect; output characteristics; oxide trapped charge; partially depleted silicon-on-insulator NMOSFET; total dose irradiation-induced degradation; transfer characteristics; Charge carrier processes; Hysteresis; Logic gates; MOSFETs; Radiation effects; Transconductance; Tunneling; Hysteresis; linear kink effect; silicon-on-insulator (SOI); total dose irradiation;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2013.2239660

Filename

6464614