DocumentCode
616796
Title
High-resistivity silicon photodiode arrays for x-ray detection
Author
Ross, Susan ; Haji-Sheikh, Michael ; Westberg, Gregg
Author_Institution
X-ray Sci. Div., Argonne Nat. Lab., Argonne, IL, USA
fYear
2013
fDate
6-9 May 2013
Firstpage
1017
Lastpage
1021
Abstract
Presented is a method to build silicon multi-pixel x-ray detectors for use on the Argonne National Laboratory´s Advanced Photon Source x-ray synchrotron. These detectors are PIN diodes constructed using heavily doped oxide sources. The construction method chosen helps reduce the background leakage current and allows for a minimum of process steps. We discuss test results of the characterization of the sensors.
Keywords
X-ray detection; elemental semiconductors; leakage currents; p-i-n photodiodes; photodetectors; sensor arrays; silicon; Argonne National Laboratory; PIN diode; Si; advanced photon source X-ray synchrotron; background leakage current; heavily doped oxide source; high-resistivity silicon photodiode array; silicon multipixel X-ray detector; Detectors; Fabrication; Fuels; Leakage currents; Semiconductor diodes; Silicon; PIN diode; photodetector; x-ray detector;
fLanguage
English
Publisher
ieee
Conference_Titel
Instrumentation and Measurement Technology Conference (I2MTC), 2013 IEEE International
Conference_Location
Minneapolis, MN
ISSN
1091-5281
Print_ISBN
978-1-4673-4621-4
Type
conf
DOI
10.1109/I2MTC.2013.6555569
Filename
6555569
Link To Document