DocumentCode :
616796
Title :
High-resistivity silicon photodiode arrays for x-ray detection
Author :
Ross, Susan ; Haji-Sheikh, Michael ; Westberg, Gregg
Author_Institution :
X-ray Sci. Div., Argonne Nat. Lab., Argonne, IL, USA
fYear :
2013
fDate :
6-9 May 2013
Firstpage :
1017
Lastpage :
1021
Abstract :
Presented is a method to build silicon multi-pixel x-ray detectors for use on the Argonne National Laboratory´s Advanced Photon Source x-ray synchrotron. These detectors are PIN diodes constructed using heavily doped oxide sources. The construction method chosen helps reduce the background leakage current and allows for a minimum of process steps. We discuss test results of the characterization of the sensors.
Keywords :
X-ray detection; elemental semiconductors; leakage currents; p-i-n photodiodes; photodetectors; sensor arrays; silicon; Argonne National Laboratory; PIN diode; Si; advanced photon source X-ray synchrotron; background leakage current; heavily doped oxide source; high-resistivity silicon photodiode array; silicon multipixel X-ray detector; Detectors; Fabrication; Fuels; Leakage currents; Semiconductor diodes; Silicon; PIN diode; photodetector; x-ray detector;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Instrumentation and Measurement Technology Conference (I2MTC), 2013 IEEE International
Conference_Location :
Minneapolis, MN
ISSN :
1091-5281
Print_ISBN :
978-1-4673-4621-4
Type :
conf
DOI :
10.1109/I2MTC.2013.6555569
Filename :
6555569
Link To Document :
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