Quantitative Characterization of the Liquid Crystal Doped With Nanoscaled Tin-Doped Indium Oxide Under High Electric Fields

Author

Bau-Jy Liang ; Don-Gey Liu ; Wei-Lung Tsai ; Pei-Fung Hsu ; Bing-Jie Jin ; Min-Lung Hsiau ; Rong-Fuh Louh

Author_Institution

Dept. of Electr. Eng., Feng Chia Univ., Taichung, Taiwan

Volume

14

Issue

1

fYear

2014

fDate

Mar-14

Firstpage

35

Lastpage

41

Abstract

In this paper, a pulse circuit was designed to simulate the source of an electrostatic discharge (ESD). This high-voltage source was successfully used in ESD tests to precisely control the voltage exerted on the liquid crystal (LC) cells. In addition, the characteristics of the samples under ESD were measured by a more precise pulse source. According to the measurement of the relaxation of the sticking images, the behavior of the tin-doped indium oxide (ITO) nanoparticles in the LC was investigated in detail. It was confirmed that the amount of ITO may affect the speed of releasing high-voltage charges after the attack of ESD. In addition, we tried to estimate the resistivity and density of the conductive ITO bridges.

Keywords

electrical resistivity; electrostatic discharge; indium compounds; liquid crystal displays; liquid crystals; nanoparticles; semiconductor materials; tin compounds; ITO; conductive ITO bridge density; conductive ITO bridge resistivity; electric fields; electrostatic discharge source; high-voltage charges; high-voltage source; liquid crystal cells; nanoscaled tin-doped indium oxide; pulse circuit; pulse source; sticking image relaxation measurement; tin-doped indium oxide nanoparticle behavior; Bridge circuits; Conductivity; Electric fields; Electrostatic discharges; Indium tin oxide; Resistance; Voltage measurement; Electrostatic discharges; impurities; liquid crystal displays; liquid crystals;

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2013.2286811

Filename

6644282