Title :
Design and comparative analysis of differential current sensing comparator in deep sub — Micron region
Author :
Kapadia, Dhanisha N. ; Gandhi, Priyesh P.
Author_Institution :
L.C. Inst. of Technol., Bhandu, India
Abstract :
In this paper a CMOS Differential current sensing comparator along with the Buffer stage has been introduced. The simulation is carried out in 130nm and 90nm technologies. The supply voltage for this comparator is 1.3v and 0.9v for 130nm and 90nm respectively. Various analysis of different characteristics of the comparator such as offset, ICMR, propagation delay, power dissipation has been carried out in both the technologies and the result has been compared for both the technologies. The simulation results shows that the speed of 1.48GHz and 1.06GHz with the power dissipation of 12.12mW and 133.76 was achieved in 90nm and 130nm technologies respectively.
Keywords :
CMOS integrated circuits; comparators (circuits); CMOS differential current sensing comparator; ICMR; buffer stage; deep submicron region; frequency 1.06 GHz; frequency 1.48 GHz; power 12.12 mW; power dissipation; propagation delay; size 130 nm; size 90 nm; voltage 0.9 V; voltage 1.3 V; CMOS integrated circuits; Communications technology; Conferences; Latches; Propagation delay; Sensors; Transistors; Buffer stage; current sensing comparator; latch comparator;
Conference_Titel :
Information & Communication Technologies (ICT), 2013 IEEE Conference on
Conference_Location :
JeJu Island
Print_ISBN :
978-1-4673-5759-3
DOI :
10.1109/CICT.2013.6558055
