Quantum simulation for separate double gate InA1As/InGaAs HEMT

Author

Verma, Naveen ; Parveen ; Jogi, Jyotika

Author_Institution

Dept. of Electron. Sci., Univ. of Delhi, New Delhi, India

fYear

2013

fDate

11-12 April 2013

Firstpage

765

Lastpage

769

Abstract

A quantum model is used for the simulation of the double-gate (DG) InAlAs/InGaAs HEMT for nanometer gate dimension with two separate gate controls. Classical approach fails from the nanoscale device modeling viewpoint. The Quantum Moments model includes the quantization effects and accordingly model the various vital characteristics of the device. The effect of quantization can be observed majorly in the electron concentration profile presented in the paper. Moreover, the separate gate provides an improved control on the channel and various device characteristics. I_D-V_DS, I_D-V_GS, transconductance, output conductance, capacitances and cut-off frequency of the device are shown and discussed in the paper.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device models; InAlAs-InGaAs; electron concentration profile; gate controls; nanometer gate dimension; nanoscale device modeling; quantum moment model; quantum simulation; separate double gate HEMT; Capacitance; Equations; HEMTs; Indium compounds; Logic gates; Mathematical model; Quantum mechanics; HEMT; double gate; modeling; quantum simulation; separate gate control;

fLanguage

English

Publisher

ieee

Conference_Titel

Information & Communication Technologies (ICT), 2013 IEEE Conference on

Conference_Location

JeJu Island

Print_ISBN

978-1-4673-5759-3

Type

conf

DOI

10.1109/CICT.2013.6558197

Filename

6558197