DocumentCode :
618386
Title :
Quantum simulation for separate double gate InA1As/InGaAs HEMT
Author :
Verma, Naveen ; Parveen ; Jogi, Jyotika
Author_Institution :
Dept. of Electron. Sci., Univ. of Delhi, New Delhi, India
fYear :
2013
fDate :
11-12 April 2013
Firstpage :
765
Lastpage :
769
Abstract :
A quantum model is used for the simulation of the double-gate (DG) InAlAs/InGaAs HEMT for nanometer gate dimension with two separate gate controls. Classical approach fails from the nanoscale device modeling viewpoint. The Quantum Moments model includes the quantization effects and accordingly model the various vital characteristics of the device. The effect of quantization can be observed majorly in the electron concentration profile presented in the paper. Moreover, the separate gate provides an improved control on the channel and various device characteristics. ID-VDS, ID-VGS, transconductance, output conductance, capacitances and cut-off frequency of the device are shown and discussed in the paper.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device models; InAlAs-InGaAs; electron concentration profile; gate controls; nanometer gate dimension; nanoscale device modeling; quantum moment model; quantum simulation; separate double gate HEMT; Capacitance; Equations; HEMTs; Indium compounds; Logic gates; Mathematical model; Quantum mechanics; HEMT; double gate; modeling; quantum simulation; separate gate control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Information & Communication Technologies (ICT), 2013 IEEE Conference on
Conference_Location :
JeJu Island
Print_ISBN :
978-1-4673-5759-3
Type :
conf
DOI :
10.1109/CICT.2013.6558197
Filename :
6558197
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=618386
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