Title :
Design of a high gain low noise amplifier for wireless applications
Author :
Jeemon, B.K. ; Veeravalli, Sandeep Kumar ; Shambavi, K. ; Alex, Zachariah C.
Author_Institution :
Sch. of Electron. Eng., VIT Univ., Vellore, India
Abstract :
This paper presents the design of a high gain low noise amplifier operating in a bandwidth of .5014 GHz for wireless applications. High gain of 16.17dB is achieved at a frequency of 4 GHz. The Low noise amplifier is an electronic amplifier used to amplify possibly very weak signals. Its mostly placed at the front-end of a radio receiver circuit so that the effect of noise from subsequent stages of the receiver chain is reduced by the gain of the LNA. The transistor used here for the design of LNA is GaAs FET N76000. The high gain low noise amplifier is designed by using AWR microwave office version.
Keywords :
field effect transistors; gallium arsenide; low noise amplifiers; microwave amplifiers; radio receivers; AWR microwave office version; FET N76000; GaAs; LNA; bandwidth 0.5014 GHz; electronic amplifier; frequency 4 GHz; gain 16.17 dB; high gain low noise amplifier; radio receiver circuit; receiver chain; wireless applications; Circuit stability; Gain; Low-noise amplifiers; Microwave amplifiers; Noise figure; Stability analysis; Transistors;
Conference_Titel :
Information & Communication Technologies (ICT), 2013 IEEE Conference on
Conference_Location :
JeJu Island
Print_ISBN :
978-1-4673-5759-3
DOI :
10.1109/CICT.2013.6558277
