Design of a high gain low noise amplifier for wireless applications

Author

Jeemon, B.K. ; Veeravalli, Sandeep Kumar ; Shambavi, K. ; Alex, Zachariah C.

Author_Institution

Sch. of Electron. Eng., VIT Univ., Vellore, India

fYear

2013

fDate

11-12 April 2013

Firstpage

1171

Lastpage

1174

Abstract

This paper presents the design of a high gain low noise amplifier operating in a bandwidth of .5014 GHz for wireless applications. High gain of 16.17dB is achieved at a frequency of 4 GHz. The Low noise amplifier is an electronic amplifier used to amplify possibly very weak signals. Its mostly placed at the front-end of a radio receiver circuit so that the effect of noise from subsequent stages of the receiver chain is reduced by the gain of the LNA. The transistor used here for the design of LNA is GaAs FET N76000. The high gain low noise amplifier is designed by using AWR microwave office version.

Keywords

field effect transistors; gallium arsenide; low noise amplifiers; microwave amplifiers; radio receivers; AWR microwave office version; FET N76000; GaAs; LNA; bandwidth 0.5014 GHz; electronic amplifier; frequency 4 GHz; gain 16.17 dB; high gain low noise amplifier; radio receiver circuit; receiver chain; wireless applications; Circuit stability; Gain; Low-noise amplifiers; Microwave amplifiers; Noise figure; Stability analysis; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Information & Communication Technologies (ICT), 2013 IEEE Conference on

Conference_Location

JeJu Island

Print_ISBN

978-1-4673-5759-3

Type

conf

DOI

10.1109/CICT.2013.6558277

Filename

6558277