• DocumentCode
    618522
  • Title

    Reduced order thermal modeling of power electronics modules via Time Domain Vector Fitting

  • Author

    D´Arco, Salvatore ; Gustavsen, Bjorn

  • Author_Institution
    SINTEF Energy Res., Trondheim, Norway
  • fYear
    2013
  • fDate
    12-15 May 2013
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Thermal modeling of power electronics modules is often used for the prediction of internal temperatures which is essential for safe operation and life time estimations. However, the models provided by manufacturers are normally quite simplified, accounting only partially for the crosscoupling effects between chips. A more accurate analysis is possible using Finite Element Method (FEM) analysis but its combination with general time domain simulations is complicated and computationally demanding. We show a simple procedure for overcoming this difficulty by extracting a rational function-based model from time domain responses obtained by a FEM analysis. The model, which is extracted using TD-VF, is both low-order and highly accurate. We report an example from thermal simulation of an IGBT power module. The new method gives savings in computation time of the order of two magnitudes, compared to FEM simulation.
  • Keywords
    finite element analysis; insulated gate bipolar transistors; power bipolar transistors; semiconductor device models; time-domain analysis; FEM analysis; IGBT power module; TD-VF; cross-coupling effect; finite element method; internal temperature prediction; life time estimation; power electronic module; rational function-based model; reduced order thermal modeling; safe operation; thermal simulation; time domain simulation; time domain vector fitting; time-domain response; Computational modeling; Finite element analysis; Heating; Insulated gate bipolar transistors; Temperature distribution; Time-domain analysis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Signal and Power Integrity (SPI), 2013 17th IEEE Workshop on
  • Conference_Location
    Paris
  • Print_ISBN
    978-1-4673-5678-7
  • Type

    conf

  • DOI
    10.1109/SaPIW.2013.6558333
  • Filename
    6558333