Title :
AlGaAs/InGaAs thermopiles for infrared imaging using surface bulk micromachining technology
Author :
Ang, K.S. ; Hofstetter, R. ; Wang, Huifang ; Manoj, K. ; Retnam, L.N. ; Ng, G.I. ; Abe, Makoto
Author_Institution :
TL@NTU, Nanyang Technol. Univ., Singapore, Singapore
Abstract :
In this work, modulation-doped AIGaAs/InGaAs micromachined thermopile-based infrared (IR) sensor is reported. The key features of the IR sensors are the incorporation of high mobility - modulation-doped AlGaAs/InGaAs heterostructure and a multi-layer Cr2O3 absorber combined with the surface bulk micromachined device structure to achieve high sensing performance. A responsivity of ~3000 V/W and a relative detectivity of 1.4 × 108 cm·Hz1/2/W at λ > 5 μm have been achieved.
Keywords :
aluminium compounds; chromium compounds; gallium arsenide; image sensors; indium compounds; infrared detectors; infrared imaging; micromachining; thermopiles; AlGaAs-InGaAs-Cr2O3; IR sensor; high mobility-modulation-doped micromachined thermopile-based infrared sensor; infrared imaging; multilayer absorber; surface bulk micromachined device structure; thermopile; Epitaxial layers; Gallium arsenide; Gold; Indium gallium arsenide; Micromachining; Nickel; Wavelength measurement;
Conference_Titel :
Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP), 2013 Symposium on
Conference_Location :
Barcelona
Print_ISBN :
978-1-4673-4477-7
