DocumentCode
618665
Title
Investigation of nonlinear thermal parameters of compound semiconductor devices
Author
Sarkany, Zoltan ; Rencz, Marta
Author_Institution
Dept. of Electron Devices, Budapest Univ. of Technol. & Econ., Budapest, Hungary
fYear
2013
fDate
16-18 April 2013
Firstpage
1
Lastpage
5
Abstract
A common property of compound semiconductor materials is the high temperature dependency of thermal conductivity. In this paper we present a method which can help determining the temperature coefficient of these materials using thermal transient measurement results. In the third section we validate the method using numerical experiments. Then in the fourth section we show that it can be applied to measured results also with good results.
Keywords
semiconductor device models; compound semiconductor devices; compound semiconductor materials; high-temperature dependency; nonlinear thermal parameters; numerical experiment; temperature coefficient; thermal conductivity; thermal transient measurement; Conductivity; Materials; Semiconductor device measurement; Temperature measurement; Temperature sensors; Thermal conductivity; Transient analysis; GaAs; Thermal conductivity; temperature coefficient;
fLanguage
English
Publisher
ieee
Conference_Titel
Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP), 2013 Symposium on
Conference_Location
Barcelona
Print_ISBN
978-1-4673-4477-7
Type
conf
Filename
6559450
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