Contributing parameters for magnetoresistance effect of the new design on Hall plate structure

This paper presents the parameters which contribute magnetoresistance effect of the new design on Hall plate structure when it is compared with series resistance structure. The new design is designed with rectangular aluminum ring surrounding on Hall plate. It creates zero Hall voltage area which the carriers move and deflect freely. The new and classical designs have percentage of magnetoresistance effect about 20% at doping concentration 2 × 10¹⁵ cm^-3, temperature 300 K at magnetic field 3 Tesla when classical one has metal space about 10 μm. The new design one is easier design than the classical series resistance and has no effect of metal space. Parameters which are used in this experiment are silicon and gallium arsenide at doping concentration 2 × 10¹⁴, 2 × 10¹⁵ and 2 × 10¹⁶ at temperature 200, 250 and 300 K with Sentaurus TCAD program for simulation. The new design has the percentage of magnetoresistance effect much higher up to 906% over than the classical series resistance when it is designed with high mobility material, low doping concentration and low temperature.