Title :
Graphene films synthesized on electroplated Cu by chemical vapor deposition
Author :
Wenrong Wang ; Chen Liang ; Tie Li ; Heng Yang ; Na Lu ; Yuelin Wang
Author_Institution :
State Key Labs. of Transducer Technol., Shanghai Inst. of Microsyst. & Inf. Technol., Shanghai, China
Abstract :
In this paper, electroplated Cu was used as substrate to grow graphene by chemical vapor deposition (CVD) with a mixture gas of methane, hydrogen and argon. The different electroplated Cu grain size after annealing was studied. We present the growth temperature, growth time and methane concentration are key parameters that affect the structural perfection of graphene.
Keywords :
annealing; chemical vapour deposition; electroplating; gas mixtures; graphene; thin films; C; CVD; Cu; annealing; argon gas; chemical vapor deposition; electroplated copper; grain size; graphene films; growth temperature; growth time; hydrogen gas; methane concentration; methane gas; mixture gas; structural perfection; Annealing; Argon; Chemical vapor deposition; Copper; Films; Graphene; Scanning electron microscopy; CVD; electroplated Cu; graphene;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems (NEMS), 2013 8th IEEE International Conference on
Conference_Location :
Suzhou
Electronic_ISBN :
978-1-4673-6351-8
DOI :
10.1109/NEMS.2013.6559693
