DocumentCode :
618908
Title :
An energy harvesting device manufactured using the commercial 0.18 µm CMOS process
Author :
Ching-Liang Dai ; Ming-Zhi Yang ; Shih-Wen Peng
Author_Institution :
Dept. of Mech. Eng., Nat. Chung Hsing Univ., Taichung, Taiwan
fYear :
2013
fDate :
7-10 April 2013
Firstpage :
128
Lastpage :
131
Abstract :
This study investigates the fabrication and characterization of an energy harvesting device using the commercial 0.18 μm CMOS (complementary metal oxide semiconductor) process. Based on the thermoelectric method, the energy harvesting device converts thermal energy into electrical power. The energy harvesting device is constructed by 408 thermocouples in series, and each thermocouple is composed of p-type and n-type polysilicon strips. In order to increase the temperature difference in the hot and cold parts of the thermocouples, the hot part of the thermocouples is suspended to reduce heat sink. The experimental results showed that the energy harvesting device had an output voltage of 0.4 mV at the temperature difference of 15 K and an output power of 125 nW at the temperature difference of 15 K.
Keywords :
CMOS integrated circuits; energy harvesting; heat sinks; thermocouples; thermoelectric conversion; CMOS process; energy harvesting device fabrication; heat sink; polysilicon strips; power 125 nW; size 0.18 mum; temperature difference; thermal energy; thermocouples; thermoelectric method; voltage 0.4 mV; CMOS process; Energy harvesting; Generators; Power generation; Substrates; Wireless communication; Wireless sensor networks; CMOS; energy harvesting device; thermocouple;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano/Micro Engineered and Molecular Systems (NEMS), 2013 8th IEEE International Conference on
Conference_Location :
Suzhou
Electronic_ISBN :
978-1-4673-6351-8
Type :
conf
DOI :
10.1109/NEMS.2013.6559697
Filename :
6559697
Link To Document :
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