Title :
Fabrication and characterization of a novel multi-annular type backscattered electron detector for SEM
Author :
Yun-Ju Chuang ; Pei-Ru Chen ; Wei-Rui Lin ; Fu-Ron Chen
Author_Institution :
Dept. of Biomed. Eng., Ming Chuan Univ., Taoyuan, Taiwan
Abstract :
A novel silicon p-i-n diodes for detecting backscattering electrons in SEM was proposed and fabricated. The multi-annular configuration enables to provide better surface topography contrast of BSE image compared with traditional quadratic configuration. In this study, the multi-annular backscattered electron detector (BSED) can provide surface topography contrast of 82.11 nA/μm, which is 105% increase as compared with commercial BSED. Besides, the multi-annular detector has lower threshold detective energy of 1.28 keV and wide detective dynamic range (up to 30 keV). It is demonstrated that the multi-annular BSE detector is well suited for imaging in SEM system.
Keywords :
electron backscattering; electron detection; p-i-n diodes; scanning electron microscopy; silicon radiation detectors; surface topography; BSE image; SEM system; electron volt energy 1.28 keV; multiannular BSE detector; multiannular configuration; multiannular type backscattered electron detector; novel silicon p-i-n diodes; scanning electron microscope; surface topography; threshold detective energy; Detectors; Electron beams; Scanning electron microscopy; Silicon; Surface topography; SEM; backscattered electrondetector;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems (NEMS), 2013 8th IEEE International Conference on
Conference_Location :
Suzhou
Electronic_ISBN :
978-1-4673-6351-8
DOI :
10.1109/NEMS.2013.6559778
