DocumentCode :
618997
Title :
Identification of ligand-receptor binding affinity using AlGaN/GaN high electron mobility transistors and binding-site models
Author :
Yu-Lin Wang ; Chih-Cheng Huang ; You-Ren Hsu ; Yen-Wen Kang
Author_Institution :
Inst. of Nanoengineering & Microsyst., Nat. Tsing Hua Univ., Hsinchu, Taiwan
fYear :
2013
fDate :
7-10 April 2013
Firstpage :
532
Lastpage :
537
Abstract :
AlGaN/GaN high electron mobility transistors (HEMTs) were immobilized with various receptors, including antibodies, duplex DNA, and HIV reverse transcriptase (RT) enzymes to detect ligands, including peptides, SARS proteins, and HIV drugs, respectively. Signals generated by the sensors were fitted into binding-site models and analyzed. The dissociation constants of the ligand-receptor pairs and the number of binding-sites on receptors were resolved. The HEMTs and the models were demonstrated to be useful for drug developments and for elucidating SARS virus replication.
Keywords :
DNA; III-V semiconductors; aluminium compounds; biomedical electronics; biosensors; dissociation; drugs; enzymes; gallium compounds; high electron mobility transistors; microorganisms; wide band gap semiconductors; AlGaN-GaN; HEMT-based biosensors; HIV drugs; HIV reverse transcriptase; RT enzymes; SARS proteins; SARS virus replication; binding-site models; dissociation constants; duplex DNA; high electron mobility transistors; ligand detection; ligand-receptor binding affinity identification; ligand-receptor pairs; peptides; Equations; HEMTs; MODFETs; Mathematical model; Peptides; Proteins; Sensors; GaN; HEMTs; binding sites; dissociation constant; sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano/Micro Engineered and Molecular Systems (NEMS), 2013 8th IEEE International Conference on
Conference_Location :
Suzhou
Electronic_ISBN :
978-1-4673-6351-8
Type :
conf
DOI :
10.1109/NEMS.2013.6559786
Filename :
6559786
Link To Document :
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