Title :
A novel method to fabricate silicon nanopore arrays
Author :
Deng, T. ; Zhao, Chen ; Chen, Jiann-Jong ; Liu, Zhe
Abstract :
This paper presents a novel method for fabrication of silicon nanopore arrays. The proposed method comprises of an inductive coupled plasma (ICP) deep etching and a two-step anisotropic wet etching. A nanopore array with an average feature size of 55 nm and several individual rectangular nanopores with feature sizes as small as 18 nm were successfully obtained using this method. These results indicate the potential of this method for the large-scale production of nanopores arrays with desired sizes and shapes.
Keywords :
elemental semiconductors; etching; nanofabrication; nanoporous materials; porous semiconductors; semiconductor growth; silicon; Si; average size; inductive coupled plasma deep etching; large-scale production; rectangular nanopores; silicon nanopore array fabrication; size 18 nm; size 55 nm; two-step anisotropic wet etching; Fabrication; Iterative closest point algorithm; Nanobioscience; Shape; Silicon; Wet etching; ICP; nanopore; nanopore array; wet etching;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems (NEMS), 2013 8th IEEE International Conference on
Conference_Location :
Suzhou
Electronic_ISBN :
978-1-4673-6351-8
DOI :
10.1109/NEMS.2013.6559828
