DocumentCode :
619041
Title :
Micro-fabricated multi-resonant capacitive switch for UWB applications
Author :
Yoon, Min ; Cheon, Seong ; Park, Jae Young
Author_Institution :
Dept. of Electron. Eng., Kwangwoon Univ., Seoul, South Korea
fYear :
2013
fDate :
7-10 April 2013
Firstpage :
726
Lastpage :
729
Abstract :
In this study, a micro-fabricated multi-resonant capacitive switch with high isolation was successfully designed and fabricated for ultra wide band (UWB) system ranging from 3- to 10-GHz. To achieve the high isolation and wide frequency bandwidth, three capacitive shunt membranes and meander inductors were utilized to design the switch with three LC resonant switching circuits. And also, aluminum nitride film (AlN) was applied to increase on/off capacitance ratio of the micro-fabricated capacitive switch. The dielectric constant and tangent loss of the AlN film were 8.8 and 0.008, respectively. The measured on-state and off-state capacitances of each capacitive shunt switch were approximately 52 fF and 3.1 pF. The capacitance ratio was approximately 59. The fabricated resonant switch exhibited the high isolation of over 30dB at the frequencies ranging from 5- to 10-GHz and 70 dB at 6.5GHz. The size and volume of the fabricated switch were approximately 1.4 × 1.7 × 0.0083 (H) mm3.
Keywords :
aluminium compounds; microfabrication; microswitches; microwave switches; ultra wideband technology; LC resonant switching circuit; UWB application; aluminum nitride film; capacitive shunt membrane; dielectric constant; meander inductor; microfabricated multiresonant capacitive switch; off-state capacitance; on-off capacitance ratio; on-state capacitance; tangent loss; ultrawideband system; Capacitance; III-V semiconductor materials; Inductors; Radio frequency; Resonant frequency; Switches; Switching circuits; Capacitive switch; Electrostatic actuation; MEMS switch; Meander inductor; Resonant switching circuit; UWB;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano/Micro Engineered and Molecular Systems (NEMS), 2013 8th IEEE International Conference on
Conference_Location :
Suzhou
Electronic_ISBN :
978-1-4673-6351-8
Type :
conf
DOI :
10.1109/NEMS.2013.6559831
Filename :
6559831
Link To Document :
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