Effect of RF sputtering parameters on PZT crystal growth

Author

Miao Yu ; Giffney, Tim ; Kean Aw ; Haixia Zhang

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

fYear

2013

fDate

7-10 April 2013

Firstpage

821

Lastpage

824

Abstract

Lead zirconate titanate(PZT) due to its large polarization, large dielectric constant and good piezoelectric performance has become popular in a wide range of applications in MEMS field. The prevailing technique for PZT deposition is sol-gel method, but the stability of solution and repeated coating can´t be precisely controlled. Sputtering technique is used in this work for its relatively simple fabrication process, uniform thickness. In this work, PZT films are sputtered on Pt/Ti/SiO₂/Si substrate prior to annealing. PZT preferential orientation is highly depend on the sputtering parameters. X-ray diffraction(XRD) analysis has been performed to compare the crystal growth. TiO₂ seed layer is also introduced in this work.

Keywords

X-ray diffraction; annealing; crystal growth from vapour; lead compounds; piezoelectric thin films; piezoelectricity; sputter deposition; texture; MEMS; PZT; Pt-Ti-SiO₂-Si; Pt-Ti-silica-Si substrate; RF sputtering parameter effect; Si; X-ray diffraction; XRD analysis; annealing; dielectric constant; fabrication process; lead zirconate titanate crystal growth; lead zirconate titanate deposition; lead zirconate titanate preferential orientation; piezoelectric performance; repeated coating; sol-gel method; solution stability; sputtering technique; stability films; titania seed layer; uniform thickness; Crystals; Films; Lead; Rapid thermal annealing; Sputtering; X-ray scattering; PZT; crystal growth; seed layer; sputtering;

fLanguage

English

Publisher

ieee

Conference_Titel

Nano/Micro Engineered and Molecular Systems (NEMS), 2013 8th IEEE International Conference on

Conference_Location

Suzhou

Electronic_ISBN

978-1-4673-6351-8

Type

conf

DOI

10.1109/NEMS.2013.6559851

Filename

6559851