DocumentCode
619149
Title
Mechanical property of nanoscale ZnO/Al2 O3 multilayers: An investigation by nano-indentation
Author
Wang, X.Q. ; Ding, J.N. ; Yuan, N.Y. ; Cheng, George G. ; Zhu, Y.Y. ; Kan, B.
Author_Institution
Center for Micro/Nano Sci. & Technol., Jiangsu Univ., Zhenjiang, China
fYear
2013
fDate
7-10 April 2013
Firstpage
1222
Lastpage
1225
Abstract
Nanoscale ZnO/Al2O3 multilayers were prepared on Silicon substrates by atomic layer deposition (ALD) method at 200°C. To understand the size effect of ZnO nanoscale layers on hardness, the mechanical properties of the ZnO/Al2O3 multilayers were investigated using nano-indentation technique. As the bilayer period decreases from 60 to 2 nm, the micro-structures of ZnO layers changed from polycrystalline to amorphous. In the bilayer period interval of 60 to 6 nm, the variation of hardness versus bilayer period is similar to Hall-Patch relation, with maximum hardness and elastic modulus of ~10.69GPa and ~138.1GPa, respectively. However when the bilayer period is smaller than 6 nm, the nanolaminates became softer than the single ZnO film.
Keywords
II-VI semiconductors; alumina; atomic layer deposition; elastic moduli; grain size; hardness; laminates; multilayers; nanocomposites; nanofabrication; nanoindentation; wide band gap semiconductors; yield stress; zinc compounds; Hall-Patch relation; Si; ZnO layer microstructures; ZnO nanoscale layers; ZnO-Al2O3; atomic layer deposition method; bilayer period interval; maximum elastic modulus; maximum hardness; mechanical property; nanoindentation technique; nanolaminates; nanoscale ZnO-alumina multilayers; silicon substrates; size effect; temperature 200 degC; Aluminum oxide; Atomic layer deposition; Films; Nanoscale devices; Nonhomogeneous media; Substrates; Zinc oxide; atomic layer deposition method; mechanical propoerty; nano-indentation; nanoscale ZnO/Al2 O3 multilayers;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano/Micro Engineered and Molecular Systems (NEMS), 2013 8th IEEE International Conference on
Conference_Location
Suzhou
Electronic_ISBN
978-1-4673-6351-8
Type
conf
DOI
10.1109/NEMS.2013.6559939
Filename
6559939
Link To Document