Silicon wafer modification by laser interference

This paper presents the study of silicon wafer modification by two-beam laser interference. In the work, two-beam laser interference was used to pattern single crystal silicon wafers for the fabrication of gratings, and different laser fluences and pulses were applied to the process in the air. The results were obtained from single laser pulse exposures with the laser fluences of 637mJ/cm², 780mJ/cm² and 1280mJ/cm². The role of multiple laser pulses was also investigated. In the experiment, the laser wavelength was 1064nm, the pulse duration 7-9ns and the repetition rate 10Hz. The results indicate that the laser fluence and number of pulses have to be properly selected for the fabrication of gratings using laser interference.