DocumentCode
619562
Title
Non-volatile FPGAs based on spintronic devices
Author
Goncalves, O. ; Prenat, G. ; Di Pendina, G. ; Dieny, Bernard
Author_Institution
Spintec, UJF, Grenoble, France
fYear
2013
fDate
May 29 2013-June 7 2013
Firstpage
1
Lastpage
3
Abstract
This paper presents an innovative architecture for radiation-hardened FPGA (Field Programmable Gate Array). This architecture is based on the use of MTJs (Magnetic Tunnel Junctions), magnetic nanostructures used as basic elements of MRAM (Magnetic Random Access Memory). These devices are totally immune to radiations and can be used as a reference memory to perform “scrubbing” techniques, which consist in regularly reloading the configuration of the FPGA to fix the radiation induced errors that may have occured. This approach allows hardening the circuits at low cost in terms of area, while reducing the standby power consumption and offering new functionalities, like dynamic reconfiguration. A silicon demonstrator was implemented, including a 2-inputs LUT (Look Up Table) and tested using a digital tester, giving encouraging results.
Keywords
MRAM devices; elemental semiconductors; field programmable gate arrays; magnetic tunnelling; magnetoelectronics; radiation hardening (electronics); silicon; 2-input LUT; 2-input look up table; MRAM basic elements; MTJ; magnetic nanostructures; magnetic random access memory basic elements; magnetic tunnel junctions; nonvolatile FPGA; power consumption; radiation induced errors; radiation-hardened FPGA; radiation-hardened field programmable gate array; scrubbing techniques; silicon demonstrator; spintronic devices; Field programmable gate arrays; Junctions; Magnetic switching; Magnetic tunneling; Random access memory; Switches; Table lookup; DRAM; FPGA; LUT; MRAM; MTJ; radiation hardning; scrubbing; soft error;
fLanguage
English
Publisher
ieee
Conference_Titel
Design Automation Conference (DAC), 2013 50th ACM/EDAC/IEEE
Conference_Location
Austin, TX
ISSN
0738-100X
Type
conf
Filename
6560721
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