Title :
A low noise 1.5GHz VCO with a 3.75% tuning range using coupled FBAR´s
Author :
Nagaraju, Manohar B. ; Sankaragomathi, Kannan A. ; Gilbert, Stephen R. ; Otis, Brian P. ; Ruby, Richard C.
Author_Institution :
Dept. of Electr. Eng., Univ. of Washington, Seattle, WA, USA
Abstract :
We present the first IC oscillator using acoustically coupled FBAR´s with a 3.75% tuning range. The tuning range is higher than previous low-power FBAR oscillators and wide enough to cover the individual ISM bands. The high Q of the resonator enables to achieve a phase noise of -144.35dBc/Hz at 1MHz offset with a carrier frequency of 1.55GHz and a power consumption of 11.7mW. The miniaturized coupled FBAR die is (500×540)μm2. The active area of the CMOS is (600x550)μm2.
Keywords :
CMOS integrated circuits; UHF integrated circuits; UHF oscillators; acoustic resonators; bulk acoustic wave devices; circuit tuning; low-power electronics; phase noise; voltage-controlled oscillators; CMOS process; VCO; acoustically coupled FBAR; frequency 1.5 GHz; frequency 1.55 GHz; low-power FBAR oscillators; phase noise; power 11.7 mW; tuning range; voltage-controlled oscillators; CMOS integrated circuits; Film bulk acoustic resonators; Impedance; Phase noise; Tuning; Voltage-controlled oscillators;
Conference_Titel :
Ultrasonics Symposium (IUS), 2012 IEEE International
Conference_Location :
Dresden
Print_ISBN :
978-1-4673-4561-3
DOI :
10.1109/ULTSYM.2012.0550
