15 GHz SAW nano-transducers using ultrananocrystalline diamond/AlN thin films

Author

Dow, A.B.A. ; Ahmed, Arif ; Bittner, Achim ; Popov, C. ; Schmid, Ulrich ; Kherani, Nazir P.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Toronto, Toronto, ON, Canada

fYear

2012

fDate

7-10 Oct. 2012

Firstpage

968

Lastpage

971

Abstract

This article reports on the realization of high frequency surface acoustic wave (SAW) resonator architectures on a bi-layer aluminium nitride (AlN) /ultrananocrystalline diamond (UNCD) structure using electron beam lithography (EBL) and lift-off processes. The UNCD layer was simply synthesized using microwave plasma enhanced vapour deposition (MWPECVD). An optimized EBL process was utilized to fabricate the inter-digital transducers (IDTs) with a finger resolution of 145 nm. The fabricated device exhibited an operating frequency of 15.4 GHz, insertion loss of ~40 dB and an acoustic velocity of 8816 m/s.

Keywords

aluminium compounds; diamond; electron beam lithography; interdigital transducers; nanostructured materials; plasma CVD; surface acoustic wave resonators; AlN; EBL; IDT; MWPECVD; aluminium nitride; bi layer AlN UNCD structure; electron beam lithography; frequency 15.4 GHz; high frequency SAW resonator architectures; inter digital transducers; liftoff processes; microwave plasma enhanced vapour deposition; nanotransducers; surface acoustic wave; ultrananocrystalline diamond; velocity 8816 m/s; Diamonds; Films; III-V semiconductor materials; Surface acoustic wave devices; Surface acoustic waves; AlN/UNCD; electron beam lithography; surface acoustic wave;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium (IUS), 2012 IEEE International

Conference_Location

Dresden

ISSN

1948-5719

Print_ISBN

978-1-4673-4561-3

Type

conf

DOI

10.1109/ULTSYM.2012.0242

Filename

6561901