Title :
Wafer bonding of polycrystalline spinel with LiNbO3/LiTaO3 for temperature compensation of RF surface acoustic wave devices
Author :
Geshi, K. ; Teraoka, K. ; Kinoshita, Shosuke ; Nakayama, Makoto ; Imagawa, Y. ; Nakayama, Shoji ; Hashimoto, Koji ; Tanaka, Shoji ; Totsu, Kentaro ; Takagi, Hiroyuki
Author_Institution :
Osaka Works, Sumitomo Electr. Ind., Ltd., Osaka, Japan
Abstract :
This paper proposes use of polycrystalline spinel for the temperature compensation of RF surface acoustic wave (SAW) devices. Spinel can be bonded with LiTaO3 (LT) and LiNbO3 (LN) wafers by using adhesive and direct bonding techniques. A series of RF SAW resonators were fabricated on the LT(LN)/spinel structure, and their performance including the temperature coefficient of frequency (TCF) was measured. For comparison, SAW resonators employing Si, sapphire and alumina in place of spinel were also fabricated. The result indicated that the polycrystalline spinel offers TCF improvement better than the other materials.
Keywords :
adhesive bonding; compensation; piezoelectric materials; polymers; surface acoustic wave resonators; wafer bonding; LN; LT; LiNbO3; LiTaO3; RF SAW resonators; RF surface acoustic wave devices; SAW devices; TCF; adhesive bonding techniques; direct bonding techniques; polycrystalline spinel; spinel structure; temperature coefficient of frequency; temperature compensation; wafer bonding; Bonding; Plasma temperature; Radio frequency; Substrates; Surface acoustic waves; Wafer bonding; SAW resonator; spinel; temperature coefficient of frequency; temperature compensation; wafer bonding;
Conference_Titel :
Ultrasonics Symposium (IUS), 2012 IEEE International
Conference_Location :
Dresden
Print_ISBN :
978-1-4673-4561-3
DOI :
10.1109/ULTSYM.2012.0683