Title :
Suppression Technique of fast-shear-wave spurious responses in SAW resonators on SiO2/Al/LiNbO3 structure
Author :
Fujiwara, J. ; Goto, R. ; Nakamura, Hajime ; Tsurunari, T. ; Nakanishi, Hayao ; Hamaoka, Y.
Author_Institution :
Ind. Devices Co., Panasonic Corp., Kadoma, Japan
Abstract :
SH mode on SiO2/Al/LiNbO3 structure is studied because of their sufficient electromechanical coupling factor (K2) and good temperature coefficient of frequency (TCF). Authors proposed the suppression method of the spurious response of the Rayleigh mode and the transverse mode for the narrow duplex gap application. For the narrow duplex gap application, SiO2 thickness must be increased to achieve the good TCF characteristics. However, another spurious response is appeared near the fast-shear-wave as increasing the SiO2 thickness. This paper discusses the suppression mechanism of the spurious response near the fast-shear-wave.
Keywords :
aluminium; elastic waves; lithium compounds; silicon compounds; surface acoustic wave resonators; surface acoustic waves; Rayleigh mode; SAW resonators; SiO2-Al-LiNbO3; TCF; electromechanical coupling factor; fast-shear-wave spurious response; narrow duplex gap; surface acoustic wave resonators; temperature coefficient of frequency; transverse mode; Couplings; Films; Lithium niobate; Substrates; Surface acoustic waves; Temperature; SAW resonator; SiO2/Al/LiNbO3 structure; Spurious response; tempature coefficient;
Conference_Titel :
Ultrasonics Symposium (IUS), 2012 IEEE International
Conference_Location :
Dresden
Print_ISBN :
978-1-4673-4561-3
DOI :
10.1109/ULTSYM.2012.0199
