DocumentCode :
620765
Title :
Polarization inverted (0001) / (000-1) ScAIN film resonators operating in second overtone mode
Author :
Suzuki, M. ; Yanagitani, Takahiko ; Odagawa, Hiroyuki
Author_Institution :
Nagoya Inst. of Technol., Nagoya, Japan
fYear :
2012
fDate :
7-10 Oct. 2012
Firstpage :
1
Lastpage :
4
Abstract :
Polarization-inverted multilayered structure can excite high overtone mode resonance. Resonant frequency of high order mode resonator is higher than that of 1st mode resonator even though entire film thickness is same. The film thickness of high order mode resonator is thicker in same operating frequency. Therefore, high order mode resonator is expected to have high power handling capability. Polarization are controlled by bottom surface properties in epitaxial films, but polarization inverted multilayer structure can not be fabricated. We obtained polarization inversion in ScAlN film by Al target sputtering with small amount of Al2O3 ingot. Thickness extensional mode electromechanical coupling coefficient kt of the ScAlN film was estimated to be 0.21. Two layered polarization inverted ScAlN film resonator was prepared in this deposition process. Suppression of 1st mode resonance and excitation of 2nd overtone mode resonance were observed.
Keywords :
aluminium compounds; scandium compounds; surface acoustic wave resonators; Al2O3; ScAlN; electromechanical coupling; epitaxial films; film thickness; high order mode resonator; overtone mode resonance; polarization inverted film resonators; polarization inverted multilayer structure; polarization-inverted multilayered structure; resonance suppression; target sputtering; High overtone mode resonance; Ion beam irradiation; Polarization-inverted multi-layred films; ScAIN;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultrasonics Symposium (IUS), 2012 IEEE International
Conference_Location :
Dresden
ISSN :
1948-5719
Print_ISBN :
978-1-4673-4561-3
Type :
conf
DOI :
10.1109/ULTSYM.2012.0482
Filename :
6562094
Link To Document :
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