DocumentCode
620840
Title
Dispersion characteristics of high-order lamb wave modes in an AlN/3C-SiC layered plate
Author
Chih-Ming Lin ; Yung-Yu Chen ; Felmetsger, V. ; Senesky, Debbie G. ; Pisano, Albert P.
Author_Institution
Dept. of Mech. Eng., Univ. of California, Berkeley, Berkeley, CA, USA
fYear
2012
fDate
7-10 Oct. 2012
Firstpage
531
Lastpage
534
Abstract
A new propagation layered media composed of a piezoelectric thin film and a substrate plate is studied in this work. The displacement profiles, phase velocities, and electromechanical coupling coefficients of Lamb wave modes are theoretically investigated for the c-axis oriented AlN films on cubic silicon carbide (3C-SiC) plates. Due to the different material properties of the AlN and 3C-SiC layers, the displacement profiles of Lamb wave modes are not simply antisymmetric or symmetric with respect to the neutral axis. According to the displacement profiles, the plate acoustic wave modes in the layered plate are classified as quasi-Lamb wave modes. Some high-order quasi-Lamb wave modes in the layered plate have larger electromechanical couplings than the corresponding Lamb wave modes in an AlN thin plate. In addition, the third quasi-symmetric (QS3) Lamb wave mode exhibits a low motional impedance (Rm) of 91 ohm and a high quality factor (Q) up to 5510 at a frequency (fs) of 2.92 GHz, resulting in the highest fs·Q product, 1.61×1013 Hz, among suspended piezoelectric thin film resonators reported to date.
Keywords
III-V semiconductors; Q-factor; acoustic wave propagation; aluminium compounds; crystal resonators; dispersion (wave); electric impedance; electromagnetic coupling; electromechanical effects; inhomogeneous media; piezoelectric thin films; silicon compounds; substrates; surface acoustic waves; thin film devices; AlN-C-SiC; c-axis oriented AlN film; cubic silicon carbide plates; dispersion characteristics; displacement profile; electromechanical coupling coefficients; frequency 2.92 GHz; high-order quasiLamb wave modes; layered plate; material properties; motional impedance; phase velocities; piezoelectric thin film resonator; plate acoustic wave modes; propagation layered media; quality factor; quasisymmetric Lamb wave mode; substrate plate; Acoustics; Aluminum nitride; Couplings; Dispersion; III-V semiconductor materials; Resonant frequency; Silicon carbide; Lamb wave resonator; aluminum nitride; cubic silicon carbide; dispersion; harsh environment; high quality factor; high-order Lamb wave modes; quasi-Lamb wave mode; quasi-antisymmetric mode; quasi-symmetric mode;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultrasonics Symposium (IUS), 2012 IEEE International
Conference_Location
Dresden
ISSN
1948-5719
Print_ISBN
978-1-4673-4561-3
Type
conf
DOI
10.1109/ULTSYM.2012.0132
Filename
6562232
Link To Document