Advances in III–V semiconductor photonics: Nanostructures and integrated chips

Author

Wada, O.

Author_Institution

Center for Collaborative Res. & Technol. Dev. (CREATE), Kobe Univ., Kobe, Japan

fYear

2013

fDate

19-23 May 2013

Firstpage

1

Lastpage

2

Abstract

This paper reviews the progress of III-V semiconductor technology for the application to photonic telecommunications and signal processing systems by focusing nanostructure materials and devices as well as monolithic/hybrid integration technologies for improving performance and functions. Also the role of combined use of nanostructure devices and integration technology is discussed for the development of future energy efficient photonic systems.

Keywords

III-V semiconductors; integrated optoelectronics; nanoelectronics; nanophotonics; nanostructured materials; reviews; III-V semiconductor photonics; III-V semiconductor technology; energy efficient photonic systems; hybrid integration; integrated chips; monolithic integration; nanostructure devices; nanostructure materials; photonic telecommunications; signal processing; Materials; Nanostructures; Optical switches; Photonics; Quantum dot lasers; Vertical cavity surface emitting lasers; III–V semiconductors; Si-photonics; all-optical switches; nanostructures; optoelectronic integrated circuits (OEICs); photonic devices; photonic integrated ciruits (PICs); quantum dots;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 2013 International Conference on

Conference_Location

Kobe

ISSN

1092-8669

Print_ISBN

978-1-4673-6130-9

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2013.6562561

Filename

6562561