Single-photon emission in telecommunication band from an InAs quantum dot in a pillar structure

Author

Liu, Xindong ; Kobayashi, Nao ; Akahane, Kouichi ; Sasaki, Motoharu ; Kumano, Hidekazu ; Suemune, Ikuo

Author_Institution

Res. Inst. for Electron. Sci., Hokkaido Univ., Sapporo, Japan

fYear

2013

fDate

19-23 May 2013

Firstpage

1

Lastpage

2

Abstract

We report on the experimental demonstration of single-photon source based on a single InAs quantum dot emitting in the telecommunication band. The low-density quantum dots grown by epitaxial method are embedded in an asetched pillar structure. Photoluminescence spectrum of a single InAs quantum dot exhibits intense and narrow emission lines. Photon antibunching behavior is clearly observed using superconducting single-photon detectors with high sensitivity, which indicates the single-photon emission.

Keywords

III-V semiconductors; indium compounds; molecular beam epitaxial growth; photoemission; photoluminescence; photon antibunching; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum dots; spectral line intensity; spectral line narrowing; superconducting photodetectors; InAs; as-etched pillar structure; epitaxial method; low-density quantum dot growth; narrow emission lines; photoluminescence spectrum; photon antibunching; single quantum dot; single-photon emission; single-photon source; superconducting single-photon detectors; telecommunication band; Communications technology; Correlation; Indium phosphide; Periodic structures; Photonics; Quantum dots; Substrates; InAs; InP; Photon antibunching; single-photon source; telecommunication wavelength;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 2013 International Conference on

Conference_Location

Kobe

ISSN

1092-8669

Print_ISBN

978-1-4673-6130-9

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2013.6562567

Filename

6562567