Title :
Study of lowering onset gain for a high-speed InGaAs/InAlAs avalanche photodiode
Author :
Nada, Masahiro ; Muramoto, Yoshifumi ; Yokoyama, Haruki ; Ishibashi, Takayuki ; Matsuzaki, Hideaki
Author_Institution :
NTT Photonics Labs., NTT Corp., Atsugi, Japan
Abstract :
We investigate a novel InAlAs avalanche photodiode with double p-field control layers, which effectively eliminates the potential barrier between InGaAs absorption and InAlAs avalanche layers. The fabricated APD exhibits a low onset gain required for future optical fiber communications systems. A large 3-dB bandwidth of 22 GHz is maintained with a low gain of 2.8 for an APD with 100-nm avalanche-layer, and a GB product of 235 GHz is also achieved.
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; gallium arsenide; indium compounds; semiconductor diodes; InAlAs avalanche layers; InGaAs absorption; InGaAs-InAlAs; InGaAs-InAlAs avalanche photodiode; bandwidth 22 GHz; bandwidth 235 GHz; double p-field control layers; fabricated APD; high-speed avalanche photodiode; wavelength 100 nm; Conferences; Indium phosphide; Avalanche photodiode; InAlAs; field control layer;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2013 International Conference on
Conference_Location :
Kobe
Print_ISBN :
978-1-4673-6130-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2013.6562572
