Title :
MOVPE growth of InAs/InP QDs on directly-bonded InP/Si substrate
Author :
Matsumoto, Kaname ; Xinxin Zhang ; Kanaya, Yoshinori ; Shimomura, Kazuya
Author_Institution :
Dept. of Eng. & Appl. Sci., Sophia Univ., Tokyo, Japan
Abstract :
InP/Si substrate has been fabricated by employing wet-etching and wafer direct bonding technique. The surface of the InP/Si substrate was very smooth and no strain was observed. On top of the substrate, InAs/InP quantum dots (QDs) have been monolithically grown using metal organic vapor phase epitaxy (MOVPE). According to photo-luminescence (PL) measurement, almost the same intensity, peak wavelength and full width half of maximum (FWHM) have been observed compared to QDs on InP substrate.
Keywords :
III-V semiconductors; MOCVD; etching; indium compounds; photoluminescence; semiconductor growth; vapour phase epitaxial growth; InAs-InP; InP-Si; MOVPE growth; directly-bonded substrate; metal organic vapor phase epitaxy; photoluminescence; wafer direct bonding; wet-etching; Bonding; Epitaxial growth; Epitaxial layers; Indium phosphide; Quantum dots; Silicon; Substrates; Directly-bonded InP/Si substrate; InAs/InP; Quantum dots; double-cap procedure; stranski-krastanov growth mode;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2013 International Conference on
Conference_Location :
Kobe
Print_ISBN :
978-1-4673-6130-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2013.6562577
