DocumentCode
621010
Title
In-situ characterization of MOCVD grown GaAs-and InP-based tunable VCSEL structures
Author
Grasse, Christian ; Tomita, Yasumoto ; Wiecha, P. ; Meyer, Roland ; Grundl, T.
Author_Institution
Walter Schottky Inst., Tech. Univ. Munchen, Garching, Germany
fYear
2013
fDate
19-23 May 2013
Firstpage
1
Lastpage
2
Abstract
In-situ monitoring of growth parameters such as thickness and quality of InP and GaAs based materials is presented. This is a key technology for the fabrication of optoelectronic devices like VCSELs.
Keywords
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; laser cavity resonators; laser tuning; optoelectronic devices; quantum well lasers; semiconductor growth; surface emitting lasers; GaAs; InP; MOCVD; growth parameters; in-situ characterization; in-situ monitoring; optoelectronic devices; thickness; tunable VCSEL structures; Indium phosphide; Monitoring; Reflectivity; Rough surfaces; Surface morphology; Surface roughness; Vertical cavity surface emitting lasers; GaAs; InP; MOCVD; VCSEL; in-situ monitoring;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials (IPRM), 2013 International Conference on
Conference_Location
Kobe
ISSN
1092-8669
Print_ISBN
978-1-4673-6130-9
Electronic_ISBN
1092-8669
Type
conf
DOI
10.1109/ICIPRM.2013.6562579
Filename
6562579
Link To Document