Title :
Optimization of metamorphic buffer layers for extended-InGaAs/InP photodetectors
Author :
Seifert, Stefan ; Ravash, R. ; Franke, Dieter ; Wenning, F. ; Zengler, D. ; Kiessling, F.
Author_Institution :
Heinrich Hertz Inst., Fraunhofer Inst. for Telecommun., Berlin, Germany
Abstract :
Optimized extended-InGaAs photodetectors were grown on InP substrate using metamorphic buffer layers to achieve a strain relaxation. The samples were investigated by transmission electron microscopy and X-Ray diffraction. The results show that a number of metamorphic buffer layers and their thickness play an important role in material quality and photodetectors performance.
Keywords :
III-V semiconductors; X-ray diffraction; buffer layers; gallium arsenide; indium compounds; photodetectors; semiconductor growth; semiconductor thin films; transmission electron microscopy; InGaAs-InP; X-Ray diffraction; extended photodetector; material quality; metamorphic buffer layer optimization; strain relaxation; transmission electron microscopy; Buffer layers; Indium phosphide; Lattices; Reflection; Strain; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2013 International Conference on
Conference_Location :
Kobe
Print_ISBN :
978-1-4673-6130-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2013.6562583
