Title :
Wide energy level control of InAs QDs using doublecapping procedure by MOVPE
Author :
Yamauchi, Masato ; Iwane, Yuto ; Yoshikawa, Shuhei ; Yamamoto, Yusaku ; Shimomura, Kazuya
Author_Institution :
Dept. of Eng. & Appl. Sci., Sophia Univ., Tokyo, Japan
Abstract :
We have obtained the wide energy level control of InAs QDs structure where the PL peak wavelength were ranged from 1200nm to 1800nm. Stranski-Krastanov InAs QDs were grown by low pressure all metal-organic source MOVPE. We have controlled the InAs QDs energy level by changing the buffer layer composition under the QDs and the height using double-capping procedure and also supply amount of QDs.
Keywords :
III-V semiconductors; MOCVD; buffer layers; indium compounds; photoluminescence; semiconductor growth; semiconductor quantum dots; vapour phase epitaxial growth; InAs; MOVPE; PL peak wavelength; buffer layer composition; double-capping procedure; energy level; wavelength 1200 nm to 1800 nm; wide energy level control; Buffer layers; Energy states; Epitaxial growth; Epitaxial layers; Indium phosphide; Interrupters; Quantum dots; InAs/InP; MOVPE; Quantum dots; double-cap procedure;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2013 International Conference on
Conference_Location :
Kobe
Print_ISBN :
978-1-4673-6130-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2013.6562585
