Title :
InAs/InP quantum dot mode-locked lasers grown on (113)B InP substrate
Author :
Klaime, K. ; Calo, C. ; Piron, R. ; Paranthoen, C. ; Thiam, D. ; Batte, Thomas ; Dehaese, O. ; Le Pouliquen, J. ; Loualiche, S. ; Le Corre, A. ; Merghem, K. ; Martinez, A. ; Ramdane, A.
Author_Institution :
UEB INSA-Rennes, Foton, France
Abstract :
We report for the first time the passive mode-locking of single section Fabry-Perot (FP) lasers based on InAs quantum dots grown on (113)B InP substrate. Devices under study are a 1 and 2 mm long laser diodes emitting around 1.58 μm. Self-starting pulses with repetition rates around 39 and 23 GHz and pulse widths down to 1.5 ps are observed after propagation through a suitable length of single-mode fiber for intracavity dispersion compensation.
Keywords :
III-V semiconductors; high-speed optical techniques; indium compounds; laser beams; laser cavity resonators; laser mode locking; optical fibre dispersion; quantum dot lasers; (113)B InP substrate; FP lasers; InAs-InP; InP; intracavity dispersion compensation; laser diodes; passive mode-locking; propagation; pulse widths; quantum dot mode-locked lasers; repetition rates; self-starting pulses; single section Fabry-Perot lasers; single-mode fiber; size 1 mm; size 2 mm; time 1.5 ps; Indium phosphide; Laser mode locking; Molecular beam epitaxial growth; Optical pulses; Quantum dot lasers; Radio frequency; Substrates; Mode-locking; quantum dots (QDs); semiconductors laser;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2013 International Conference on
Conference_Location :
Kobe
Print_ISBN :
978-1-4673-6130-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2013.6562595
