• DocumentCode
    621029
  • Title

    Cryogenic DC characterization of InAs/Al80Ga20Sb self-switching diodes

  • Author

    Westlund, A. ; Moschetti, Giuseppe ; Nilsson, Per-Ake ; Grahn, Jan ; Desplanque, Ludovic ; Wallart, Xavier

  • Author_Institution
    Dept. of Microtechnol. & Nanosci. (MC2), Chalmers Univ. of Technol., Goteborg, Sweden
  • fYear
    2013
  • fDate
    19-23 May 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    DC characterization of an InAs/Al80Ga20Sb self-switching diode for THz detection is presented at 300 K and 6 K. Compared to 300 K, an enhancement of the diode I-V nonlinearity and associated responsivity was observed under zerobias conditions at 6 K. The intrinsic responsivity was estimated to 490 V/W at 300 K and 4400 V/W at 6 K.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; submillimetre wave diodes; terahertz wave detectors; InAs-Al80Ga20Sb; THz detection; associated responsivity; cryogenic DC characterization; diode I-V nonlinearity; self-switching diodes; zerobias conditions; Cooling; Detectors; Electrical resistance measurement; HEMTs; MODFETs; Radio frequency; Resistance; InAs; SSD; THz; detector; diode; self-switching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials (IPRM), 2013 International Conference on
  • Conference_Location
    Kobe
  • ISSN
    1092-8669
  • Print_ISBN
    978-1-4673-6130-9
  • Electronic_ISBN
    1092-8669
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2013.6562599
  • Filename
    6562599
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=621029