Cryogenic ultra-low noise amplification - InP PHEMT vs. GaAs MHEMT

Author

Schleeh, Joel ; Rodilla, Helena ; Wadefalk, N. ; Nilsson, P.A. ; Grahn, Jan

Author_Institution

Dept. of Microtechnol. & Nanosci. (MC2), Chalmers Univ. of Technol., Goteborg, Sweden

fYear

2013

fDate

19-23 May 2013

Firstpage

1

Lastpage

2

Abstract

We present a comparative study of 130 nm high electron mobility transistors (HEMTs) fabricated on pseudomorphic InGaAs/InAlAs/InP (InP PHEMT) and InGaAs/InAlAs/GaAs (GaAs MHEMT) intended for ultra-low noise amplifiers (LNAs). The epitaxial growth, as well as the HEMT process, was performed simultaneously. When integrated in a 4-8 GHz 3-stage LNA at 300 K, the measured average noise temperature was 34 K for the GaAs MHEMT and 27 K for the InP PHEMT. When cooled down to 10 K, the InP PHEMT LNA was improved to 1.6 K, while the GaAs MHEMT LNA was only reduced to 5 K. The reason for the superior cryogenic noise performance of the InP PHEMT compared to the GaAs MHEMT in this study, was found to be a higher quality of pinch-off when cooled down.

Keywords

III-V semiconductors; aluminium compounds; epitaxial growth; gallium arsenide; high electron mobility transistors; indium compounds; low noise amplifiers; GaAs; GaAs MHEMT; InGaAs-InAlAs-InP; InP; InP PHEMT; LNA; cryogenic ultra-low noise amplification; epitaxial growth; frequency 4.8 GHz; high electron mobility transistor; superior cryogenic noise performance; temperature 1.6 K; temperature 10 K; temperature 27 K; temperature 300 K; temperature 34 K; temperature 5 K; ultra-low noise amplifier; Gallium arsenide; Indium phosphide; Noise; PHEMTs; Temperature measurement; mHEMTs; Cryogenic; GaAs MHEMT; InP PHEMT; low noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 2013 International Conference on

Conference_Location

Kobe

ISSN

1092-8669

Print_ISBN

978-1-4673-6130-9

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2013.6562600

Filename

6562600