• DocumentCode
    621032
  • Title

    Influence of gate-channel distance in low-noise InP HEMTs

  • Author

    Nilsson, P.A. ; Rodilla, Helena ; Rodilla, J. Schleeh ; Wadefalk, N. ; Grahn, Jan

  • Author_Institution
    Dept. of Microtechnol. & Nanosci. (MC2), Chalmers Univ. of Technol., Goteborg, Sweden
  • fYear
    2013
  • fDate
    19-23 May 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The effect on the electrical properties, relevant to noise, from the gate-channel distance (barrier layer thickness) in 130 nm gate-length InP HEMTs was investigated. An increased quality of pinch-off was seen in HEMTs with an 8 nm barrier layer thickness compared to an 11 nm barrier. For the 8 nm barrier material the gate leakage increased from 1 μA/mm to 7 μA/mm at -1V gate bias.
  • Keywords
    high electron mobility transistors; InP; barrier material; gate bias; gate channel distance; gate leakage; low noise HEMT; HEMTs; Indium phosphide; Leakage currents; Logic gates; MODFETs; Noise; InP HEMT; LNA; noise;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials (IPRM), 2013 International Conference on
  • Conference_Location
    Kobe
  • ISSN
    1092-8669
  • Print_ISBN
    978-1-4673-6130-9
  • Electronic_ISBN
    1092-8669
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2013.6562602
  • Filename
    6562602
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=621032