Terahertz oscillators using resonant tunneling diodes with InAlGaAs/InP composite collector

Author

Sogabe, R. ; Shizuno, K. ; Kanaya, Haruichi ; Suzuki, Satoshi ; Asada, Minoru ; Sugiyama, H. ; Yokoyama, Haruki

Author_Institution

Grad. Sch. of Interdiscipl. Sci. & Eng., Tokyo Inst. of Technol., Tokyo, Japan

fYear

2013

fDate

19-23 May 2013

Firstpage

1

Lastpage

2

Abstract

We proposed a resonant tunneling diode (RTD) with InAlGaAs/InP composite collector for reduction in transit delay caused by the gamma to L valley transition at the collector depletion region. Terahertz oscillators fabricated with this RTD show room-temperature fundamental oscillations of 680-770 GHz with the RTD areas of 1-1.5 square microns. Higher frequency will be possible by reducing the RTD area.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; resonant tunnelling diodes; submillimetre wave oscillators; wide band gap semiconductors; InAlGaAs-InP; RTD areas; collector depletion region; composite collector; frequency 680 GHz to 770 GHz; resonant tunneling diode; temperature 293 K to 298 K; terahertz oscillators; transit delay reduction; Capacitance; Delays; Frequency measurement; Indium phosphide; Oscillators; Resonant frequency; Resonant tunneling devices; InAlGaAs/InP composite collector; resonant tunneling diode; slot antenna; terahertz oscillator;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 2013 International Conference on

Conference_Location

Kobe

ISSN

1092-8669

Print_ISBN

978-1-4673-6130-9

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2013.6562603

Filename

6562603