Title :
120nm AlSb/InAs HEMT without gate recess: 290GHz fT and 335GHz fmax
Author :
Gardes, C. ; Bagumako, S.M. ; Desplanque, Ludovic ; Wichmann, Nicolas ; Bollaert, S. ; Danneville, Frangois ; Wallart, Xavier ; Roelens, Yannick
Author_Institution :
Inst. d´Electron. de Microelectron. et de Nanotechnol. (IEMN), Univ. Lille I, Villeneuve d´Ascq, France
Abstract :
In this paper, we report on high frequency performances of AlSb/InAs high electron mobility transistor (HEMT) with 120nm gate length at room temperature. The excellent combined cut-off frequencies fT/fmax of 290/335 GHz simultaneously obtained at drain bias of 0.36V is another demonstration of the ability of AlSb/InAs HEMT for high frequency operation with low-power consumption. Small-signal equivalent circuit parameters have been extracted.
Keywords :
III-V semiconductors; aluminium compounds; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; submillimetre wave transistors; AlSb-InAs; HEMT; frequency 290 GHz; frequency 335 GHz; high electron mobility transistor; high frequency operation; high frequency performance; low power consumption; size 120 nm; voltage 0.36 V; Current measurement; Cutoff frequency; Electrical resistance measurement; Equivalent circuits; Gallium arsenide; HEMTs; Logic gates; AlSb/InAs HEMT; antimonide-based compound semiconductor; high frequency performances;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2013 International Conference on
Conference_Location :
Kobe
Print_ISBN :
978-1-4673-6130-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2013.6562604
