Terahertz GaAs Schottky diode mixer and multiplier MIC´s based on e-beam technology

Author

Drakinskiy, Vladimir ; Sobis, P. ; Zhao, Hang ; Bryllert, Tomas ; Stake, Jan

Author_Institution

Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Gothenburg, Sweden

fYear

2013

fDate

19-23 May 2013

Firstpage

1

Lastpage

2

Abstract

We present the progress of the technological development of a full e-beam based monolithically integrated Schottky diode process applicable for sub-millimetre wave multipliers and mixers. Evaluation of the process has been done in a number of demonstrators showing state-of-the-art performance, including various multiplier circuits up to 200 GHz with a measured flange efficiency of above 35%, as well as heterodyne receiver front-end modules operating at 340 GHz and 557 GHz with a measured receiver DSB noise temperature of below 700 K and 1300 K respectively.

Keywords

Schottky diode mixers; gallium arsenide; multiplying circuits; submillimetre wave integrated circuits; GaAs; MIC; e-beam technology; monolithically integrated Schottky diode process; multiplier circuits; sub-millimetre wave multipliers; terahertz GaAs Schottky diode mixer; Fabrication; Gallium arsenide; Microwave integrated circuits; Mixers; Receivers; Schottky diodes; Wet etching; Schottky diodes; membrane; multipliers; passive circuits; submillimeter wave mixers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 2013 International Conference on

Conference_Location

Kobe

ISSN

1092-8669

Print_ISBN

978-1-4673-6130-9

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2013.6562606

Filename

6562606